»ã±¨±êÌ⣺I-VI×åIIÐÍ°ëµ¼ÌåºË/¿ÇÄÉÃ×ÕóÁÐ: ´Ó¹â·üµ½¹â̽ͷ
»ã±¨±êÌâ(Ó¢ÎÄ£©£ºI-VI Type II Semiconductor Core/Shell Nanowire Arrays: From Photovoltaics to Photodetectors
»ã±¨ÈËÐÕÃû£ºWeilie Zhou
»ã±¨¹¦·ò£º2015-06-01 10:00
»ã±¨µØÖ·£ºÐ£±¾²¿¶«Çø×ÊÁÏѧԺB526
»ã±¨È˵¥Ôª£ºÃÀ¹úа¶ûÁ¼´óѧ£¨The University of New Orleans£©£¬ÏȽø×ÊÁÏ×êÑÐËù£¨AMRI£©
»ã±¨È˼ò½é£ºÖÜάÁУ¬ÃÀ¹úа¶ûÁ¼´óѧ£¨The University of New Orleans£©½ÌÊÚ£¬ÏȽø×ÊÁÏ×êÑÐËù£¨AMRI£©µç¾µÊÒÖ÷ÈΡ£1993Äê´ÓÖйú¿ÆѧԺÉòÑô½ðÊô×êÑÐËù±ÏÒµ»ñ²©Ê¿Ñ§Î»£¬Ê¦´ÓÎÒ¹ú͸Éäµç¾µµì»ùÈ˹ù¿ÉÐÅԺʿ¡£²©Ê¿±ÏÒµºóÏȺóÔÚÈÕ±¾¾«ÃÜÌÕ´ÉÖÐÐÄ£¨JFCC£©ºÍÃÀ¹ú¿Ë¹Î÷´¢´óѧ£¨Case Western Reserve University£©×÷²©Ê¿ºó£¬1998Äê½øÈëÃÀ¹úа¶ûÁ¼´óѧÖÁ½ñ¡£ÖܽÌÊڳ־ôÓÊ°뵼ÌåÒìÖʽáÄÉÃ×ÏßÕóÁеÄÔ챸ºÍ±íÕ÷£¬ÒÔ¼°ÓÉÕâЩ×ÊÁÏÔ챸µÄÄÉÃ×Æ÷¼þÔÚ´«¸ÐÆ÷¡¢Ì«ÑôÄܵç³ØÒÔ¼°×ÔÐýµç×ÓѧÁìÓòµÄÀûÓá£ÒѾ°ä·¢×¨Öø2²¿£¬ÔÚNanolett, Adv. Mater., JACSµÈ³ÛÃûѧÊõ¿¯Îï°ä·¢ÂÛÎÄ150Óàƪ¡£
»ã±¨ÄÚÈݼò½é£ºThe charge separation is often facilitated by a type II or staggered energy alignment of a heterojunction, constructed by two materials for which both the valance and conduction band of one component lie respectively lower in energy than those of the other component. Such heterojunctions have been intensively studied for solar cell applications. To improve the carrier transport within the type II scheme, core/shell all-inorganic nanowire architectures have also been investigated to improve the carrier transport for both the electron and hole using the well-known II-VI and III-V binary semiconductors, such as ZnO/ZnSe, ZnO/ZnS, CdSe/ZnTe, GaN/GaP, GaN/GaAs. In this talk, I will talk about II-VI type II semiconductor core/shell nanowire array synthesis, transmission electron microscopy (TEM) characterization and device measurements for photovoltaics. As the ZnO and CdSe nanowire arrays are of piezoelectrical properties under external loads, the core/shell nanowire arrays devices further present enhanced broad band photodetection through piezophotronic effect under different strain modes, which demonstrate the advantage of coupling effect of the devices built on three-dimensional (3D) nanoarchitectures.
