»ã±¨±êÌâ(ÖÐÎÄ)£ºPt/TaOx/Pt Æ÷¼þµÄµ¥¼«ÐÍ×è±ä¸öÐÔ
»ã±¨ÈËÐÕÃû£ºÁõ´ºÀò
»ã±¨¹¦·ò£º2014-06-27 09:00
»ã±¨µØÖ·£ºµ¢¸éУÇø×ÊÁÏËùÈýÂ¥»áÒéÊÒ
Ö÷°ìµ¥Ôª£º×ÊÁÏѧԺ
»ã±¨ÄÚÈݼò½é£ºResistance switching means to regulate the resistance of a device using a bias voltage or current. Resistance switching has been observed in most of oxide materials, and recently attracted a lot of research attention as a promising candidate for developing the universal memory devices. In this work, we report the unipolar resistance switching properties of Pt/TaOx/Pt structures. The TaOx thin film was deposited using pulsed laser deposition, and the device size is about 90 um. Depending on the substrate temperature used during the deposition, the composition of the TaOx thin film showed dramatic changes, which results in different current-voltage characteristics. Regarding the unipolar resistance switching observed in Pt/TaOx/Pt, we analyzed forming free switching and forming required switching devices. Our results showed for the first time that in addition to the difference in forming process, the conducting filament formation, shape, and evolution process are also quite different.
»ã±¨È˼ò½é£ºÁõ´ºÀò²©Ê¿µ®ÉúÓÚºÚÁú½Ê¡Ë绯ÊС£1990Ä꿼ÈëÇ廪´óѧµç»ú¹¤³Ìϵ¡£1995ÄêºÍ1998Äê»ñµÃѧʿºÍ˶ʿѧλ¡£1998Äê9Ô½øÈëÃÀ¹úÃÜËÕÀïÖÝ»ªÊ¢¶Ù´óѧµç»ú¹¤³Ìϵ£¬2002Äê»ñµÃ²©Ê¿Ñ§Î»¡£2005ÄêÔÚº«¹úÊ׶û´óѧÎïÀíϵÆðÍ·²©Ê¿ºó×êÑй¤×÷£¬×êÑз½ÏòΪ¼¤¹âÂö³å·¨µÄZnO±¡Ä¤³É³¤ºÍ×è±äÓ°ÏóÌåµÄ»úÔì×êÑС£2009Äê½øÈ뺫¹ú±í¹úÓï´óѧÎïÀíϵÖÁ´Ë¿Ì£¬Èν²Ê¦£¬Öú½ÌÊÚ£¬ºÍ¸±½ÌÊÚ¡£´Ë¿ÌµÄÖØÒª×êÑз½ÏòΪ×è±äÓ°ÏóÌåºÍ´ÅÐÔÄÉÃ××ÊÁÏ¡£
»ã±¨È˵¥Ôª£ºº«¹ú±í¹úÓï´óѧÎïÀíϵ
