»ã±¨±êÌâ (Title)£ºNovel electronic states in two-dimensional bismuth materials£¨¶þάîé×ʲÂÖеıðÖÂÁ¿×ÓÎï̬£©

»ã±¨ÈË (Speaker)£º¹¶½¡ ×êÑÐÔ± £¨Õã½­´óѧÎïÀíѧԺ£©

»ã±¨¹¦·ò (Time)£º2024Äê5ÔÂ28ÈÕ£¨Öܶþ£©14:00

»ã±¨µØÖ· (Place)£ºÐ£±¾²¿ D123

Ô¼ÇëÈË (Inviter)£ºËï˶ ¸±½ÌÊÚ

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Bismuth (Bi) is known for its unique electronic properties, owing to its distinctive position in the periodic table of elements. In this talk, I will discuss three types of two-dimensional (2D) Bi materials studied through molecular beam epitaxial (MBE) and low-temperature scanning probe microscopy (STM/qPlus-AFM). Firstly, we found, due to the large spin-orbital coupling (Soc) and close electronegativity between Bi and Sn, the introduction of Sn in Sn2Bi produce a giant Rashba splitting and asymmetric electron-hole band structure at the Fermi surface[1]. Secondly, the anisotropic structure of black phosphorous-like Bi (BP-Bi) monolayer enables the creation of a single-layer honeycomb Bi (bismuthene) with various twist moir¨¦ superlattices, in which the modulation of topological edge states has been observed[2]. finally, take the advantage of high resolution of qPlus-AFM measurement, we discovered that weak sp orbital hybridization of Bi facilitates electron transfer between sublattices and in-plane polarization switching in elementary BP-Bi monolayer[3]. This observation confirms the emergence of novel single-element ferroelectric states in the realm of solid-state physics.